switching diode 1ss355vm l applications l dimensions (unit : mm) l land size figure (unit : mm) high frequency switching l features 1)ultra small mold type. umd2 2)high reliability l construction silicon epitaxial planer l structure l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v i fm ma io ma i surge ma tj ? c tstg ? c l electrical characteristics (tj=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma reverse current i r - - 0.1 a v r =80v ct - - 3 pf v r =0.5v , f=1mhz trr - - 4 ns v r =6v , i f =10ma , r l =100 reverse voltage (dc) 80 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive peak) 90 forward current 225 average rectified forward current 100 surge current (t=1s) 500 parameter capacitance between terminals reverse recovery time junction temperature 150 storage temperature - 55 to + 150 umd2 2.1 0.8min. 0.9min. rohm : umd2 jeita : sc - 90/a jedec : sod - 323 dot (year week factory) 1/4 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1
1ss355vm 0.1 1 10 0 10 20 30 0.1 1 10 100 1000 10000 0 20 40 60 80 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 forward voltage v f (v) v f - i f characteristics forward current:i f (ma) ta=125 c ta= - 25 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics ta=125 c ta= - 25 c ta=25 c ta=75 c capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 860 870 880 890 900 910 v f dispersion map forward voltage:v f (mv) ave:875.6mv ta=25 c i f =100ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 reverse current:i r (na) i r dispersion map ta=25 c v r =80v n=30pcs ave:18.8na 0.1 0.3 0.5 0.7 0.9 ave:0.817pf capacitance between terminals:ct(pf) ct dispersion map ta=25 c v r =0.5v f=1mhz n=10pcs 2/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
1ss355vm 0 5 10 15 20 ave:3.62a 8.3ms i fsm 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 1 2 3 4 5 6 ave:3.06ns ta=25 c v r =6v i f =10ma r l =100 trr dispersion map reverse recovery time:trr(ns) 1 10 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0 5 10 15 0.1 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 1 10 100 1000 0.001 0.1 10 1000 rth(j - a) rth(j - c) mounted on epoxy board time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0.00 0.10 0.20 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( 180) 3/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
1ss355vm 0 0.0001 0.0002 0.0003 0.0004 0.0005 0.0006 0.0007 0.0008 0.0009 0.001 0 20 40 60 80 reverse voltage:v r (v) v r - p r characteristics sin( 180) d=1/2 dc 0.00 0.05 0.10 0.15 0.20 0 25 50 75 100 125 150 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =40v 0a 0v sin( 180) dc d=1/2 0 5 10 15 20 ave:1.8kv electrostatic discharge test esd(kv) esd dispersion map c=200pf r=0 c=100pf r=1.5k ave:9.0kv reverse power dissipation:p r (w) 4/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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